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AEGIS
SEMICONDUTORES LTDA.
A5A:2800.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 180OC A5A:2800.02 A5A:2800.04 A5A:2800.06 A5A:2800.08 A5A:2800.10 A5A:2800.12 200 400 600 800 1000 1200 Max. VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 180OC 300 500 700 900 1100 1300
TJ = -40 to 0OC 200 400 600 800 1000 1200
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 2300 125 4420 28.7 IFSM Max. Peak non-rep. surge current 30.0 kA 34.1 35.7 4110 I2t Max. I2t capability 3750 5810 5300 It
2 1/2
O
UNITS
O O
NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms
O Initial T J = 180 C, rated VRRM applied after surge. O
C C A C A
IF(RMS) Nom. RMS current
O Initial T J = 180 C, no voltage applied after surge.
Initial T J = 180 C, rated VRRM applied after surge. Initial T J = 180 C, no voltage applied after surge.
O
O
kA2s
t = 8.3 ms t = 10ms
Max. I t
2 1/2
capability
t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. kA2s1/2 N.m I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
F Mounting Force
58100 2500
AEGIS
SEMICONDUTORES LTDA.
A5A:2800.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.35 --------30 --------425(15) A-24 MAX. UNITS 1.53 0.786 0.805 0.1 0.086 100 0.023 0.025 0.025 0.02 --O O O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 7225A. TJ = 180O C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 180 C. Max. rated VRRM
O O O
V V mW mA
C/W DC operation, double side C/W 180 sine wave, double side C/W 120 rectangular wave, duble side Mtg. Surface smooth, flat and greased. Double side C/W cooled. ----O
O
g(oz.)
180
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature
180 170 160 150 140 130
30
Maximum Allowable Case Temperature (C)
170 160 150 140 130 120 110 0 500 1000 1500 2000
120 110 100 90 0 500 1000 1500
60 90 120 180 DC
30 60 90 120 180
2500
3000
2000
2500
3000
3500
4000
4500
*Sinusoidal waveform
*Rectangular waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:2800.XX
Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss
30
40000
30000
30
Maximum Average Forward Power Loss (W)
35000 30000 25000 20000
25000
20000
15000
60
60
15000
90
90
10000
120 180
10000 5000 0
*Sinusoidal waveform
120 180
5000
DC
0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000
*Rectangular waveform
0
500
1000 1500 2000 2500 3000 3500 4000 4500 5000
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Average Forward Power Loss Characteristics
Fig. 4 - Average Forward Power Loss Characteristics
Forward Voltage Drop
0.1
Transient Thermal Impedance ZthJC
10000
Transient Thermal Impedance ZthJC (C/W)
1.5 2.0 2.5
Instantaneous Forward Current (A)
0.01
1000
125C
25C
100 0.5 1.0
1E-3 1E-3
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance ZthJC Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:2800.XX A-24
Fig. 7 - Outline Characteristics

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